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SYLLABUS

UNIT-1

PN JUNCTION Formation of PN junction, Depletion region, Junction capacitance, Diode equation (no derivation) Effect of temperature on reverse saturation current, V-I characteristics and simple applications of (i) Junction diode (ii) Zener diode (iii) Tunnel diode and (iv) Varactor diode.

UNIT-2

BIPOLAR JUNCTION TRANSISTOR (BJT) PNP and NPN transistors, Current components in BJT, BJT static characteristics (input and output), Early effect, CB, CC, CE configurations of transistor and bias conditions (cut-off,active and saturation regions), CE configuration as two pot network, h-parameter model and its equivalent circuit, Determination of h-parameters from the characteristics, Load line analysis (AC and DC), Transistor biasing – Fixed and self bias.

UNIT-3

FIELD EFFECT TRANSISTOR (FET) Construction and working of JFET, output and transfer characteristics of FET, Determination of FET parameters, Application of FET as voltage variable resistor, Advantages of FET over BJT, MOSFET : construction and working of enhancement and depletion modes, Output and transfer characteristics, Application of MOSFET as a switch. UNI JUNCTION TRANSISTOR (UJT) Construction and working of UJT and its characteristics, Application of UJT as a relaxation oscillator.

UNIT-4

SILICON CONTROLLED RECTIFIER (SCR) Construction and working of SCR, Two transistor representation, Characteristics of SCR, Application of SCR for power control. PHOTO ELECTRONIC DEVICES Construction and characteristics of light dependent resistor (LDR), Photo voltaic cell, Photo diode, Photo transistor and Light Emitting Diode (LED).