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SYLLABUS

UNIT-I

Introduction: Basic steps of IC fabrication, PMOS, NMOS, CMOS & BiCMOS, SOI process technologies, MOS transistors – MOS transistor switches – Basic gate using switches, Working polar transistor Resistors and Capacitors. Basic Electrical Properties of MOS and BiCMOS Circuits: Working of MOS transistors – Threshold voltage; MOS design equations: Ids – Vds relationships, Threshold Voltage, Body effect, Channel length modulation, gm, gds, Figure of merit ω0 ; Pass transistor, NMOS Inverter, CMOS Inverter analysis and design, Various pull ups loads, Bi-CMOS Inverters.

UNIT-II

Basic Circuit Concepts: Capacitance, Resistance estimations – Sheet Resistance Rs , MOS Device Capacitances, Routing Capacitance, Analytic Inverter Delays, Driving large Capacitive Loads, Fan-in and fan-out. VLSI Circuit Design Processes: VLSI Design Flow, MOS Layers, Stick Diagrams, Design Rules and Layout, 2μm CMOS Design rules for wires, Contacts and Transistors Layout Diagrams for NMOS and CMOS Inverters and Gates, Scaling of MOS circuits, Limitations of Scaling.

UNIT-III

Gate level Design: Logic gates and other complex gates, Switch logic, Alternate gate circuits. Physical Design: Floor-Planning, Placement, Routing, Power delay estimation, Clock and Power routing.

UNIT-IV

Subsystem Design: Shifters, Adders, ALUs, Multipliers, Parity generators, Comparators, Counters, High Density Memory Elements. VLSI Design Styles: Full-custom, Standard Cells, Gate-arrays, FPGAs, CPLDs and Design Approach for Full-custom and Semi-custom devices.

UNIT-V

VHDL Synthesis: VHDL Synthesis, Circuit Design Flow, Circuit Synthesis, Simulation, Layout,Design capture tools, Design Verification Tools. Test and Testability: Fault-modeling and simulation, Test generation, Design for testability, Built-in self-test.